This WP aims at major breakthroughs in terms of the realization of the novel Super-Lattice structures based on chalcogenide materials in terms of composition of the layers, deposition technology and material engineering. Final objective is the realization of a new state of the art for materials design and growth, enabling a new memory concept, based on 'cold' switching.
The growth and synthesis experiments are targeting at:
Realisation of stacking of a periodic sequence of GeTe and Sb2Te3 layers along the  direction (CSLs).
Synthesis of the first single-crystalline material with clear stacking ordering.
Identification of selected stacking sequence and its overall composition.
Choice of the most suitable deposition technique.