This WP aims at major breakthroughs in terms of the realization of the novel Super-Lattice structures based on chalcogenide materials in terms of composition of the layers, deposition technology and material engineering. Final objective is the realization of a new state of the art for materials design and growth, enabling a new memory concept, based on 'cold' switching.

The growth and synthesis experiments are targeting at:

  • Realisation of stacking of a periodic sequence of GeTe and Sb2Te3 layers along the [111] direction (CSLs).

  • Synthesis of the first single-crystalline material with clear stacking ordering.

  • Identification of selected stacking sequence and its overall composition.

  • Choice of the most suitable deposition technique.